The bipolar junction transistor (BJT) is a three-element (emitter, base, and collector) device made up of alternating layers of n- and p-type semiconductor materials joined metallurgically. The transistor can be of pnp type (principal conduction by positive holes) or of npn type (principal conduction by negative electrons), as shown in Fig. 3-1 (where schematic symbols and positive current directions are also shown). The double subscript notation is utilized in labeling terminal voltages, so that, for example, Vbe symbolizes the increase in potential from emitter terminal E to base terminal B. For reasons that will become apparent, terminal currents and voltages commonly consist of superimposed dc and ac components (usually sinusoidal signals).